ESH risks of processing III/V materials

Pardon , Alain
(IMEC Belgium )

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Current research envisions III/V semiconductors as future replacement of silicon-based digital circuits. To some extend these elements are used in the same process steps as silicon processing. However, due to the toxicity of some of the precursors and their by-products, additional safety measures must be taken when processing III/V materials. Based upon the results of risk assessments and process exhaust monitoring, additional safety measures have been defined for the wet processing of III/V semiconductor layers, for the opening of process chambers of deposition tools, pump forelines as well as maintenance of process gas abatement tools. The presentation gives an insight in the ESH risks, the risk assessment as well as the safety precautions taken during the research on these materials.

Back to SESHA 34th Annual Symposium (2012)



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