Advances in Compound Semiconductor Processing

Dietz, James*; Olander, Karl; Sweeney, Joe
(ATMI, Danbury, CT)

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The handling of effluent from MOCVD reactors depositing GaAs or InP films requires careful treatment. High concentrations of arsine and phosphine in the effluent must be separated from the carrier gas stream to extremely low levels. The carrier gas is commonly hydrogen, which, at the flows up to 200 standard liters per minute per reactor, is typically vented to and diluted in a high flow waste stream. Last, solid phosphorus particles from InP deposition reactors represent an additional challenge in the effluent stream. This paper discusses several new options for simplifying and improving the abatement of gases and solids from MOCVD reactors depositing GaAs and InP films. The performance of new dry scrubber materials is presented and proven to reduce materials costs, waste generation and total operating costs when compared to existing treatment solutions. A new method for improving the performance of cold trap particle filters is presented and shown to reduce maintenance time and cost. Last, novel ideas for abatement and recycling of process gas and carrier gases are proposed.

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