III-V’s: Managing the transition into HVM Si fabs

CZERNIAK, Dr. MICHAEL; VAN GOMPEL, Dr. JOSEPH
(Edwards, San Jose, CA)

You must log in to view the full proceedings.

Utilising the high electron mobility of III-V materials in the channels of next-generation silicon transistors will be necessary to meet the requirements of higher speeds and lower power consumption. However the challenges of working with these materials in the context of a silicon fab will have to be addressed, especially gas flammability and toxicity. This paper discusses how experience learned in the manufacture of LEDs can be applied to III-V channels in Si as it transitions from a R+D to HVM context, with a particular focus on safety and equipment uptime.

Back to SESHA 37th Annual Symposium (2015)